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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KL2
vorlaufiges Datenblatt preliminary datasheet
Hochstzulassige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode Isolations-Prufspannung insulation test voltage Teilentladungs-Aussetzspannung partial discharge extinction voltage tP = 1 ms T j = 25C T j = -25C T C = 80C T C = 25 C tP = 1 ms, T C = 80C VCES 3300 3300 1200 2300 2400 V
IC,nom. IC ICRM
A A A
T C=25C, Transistor
Ptot
14,7
kW
VGES
+/- 20V
V
IF
1200
A
IFRM
2400
A
VR = 0V, tp = 10ms, T Vj = 125C
I2t
440.000
A2s
T j = 125C
PRQM
1.500
kW
RMS, f = 50 Hz, t = 1 min.
VISOL
6.000
V
RMS, f = 50 Hz, QPD 10 pC (acc. to IEC 1287)
VISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1200A, VGE = 15V, Tvj = 25C IC = 1200A, VGE = 15V, Tvj = 125C IC = 120 mA, VCE = VGE, T vj = 25C VGE(th) VCE sat
min.
4,2
typ.
3,00 3,70 5,1
max.
3,65 4,45 6,0 V V V
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V
Cies
-
145
-
nF
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V
Cres
-
8
-
nF
VGE = -15V ... + 15V, VCE = 1800V
QG
-
22
-
C
VCE = 3300V, VGE = 0V, Tvj = 25C
ICES
-
-
5
mA
VCE = 0V, VGE = 20V, Tvj = 25C
IGES
-
-
400
nA
prepared by: J. Biermann approved by: Christoh Lubke; 2002-04-30
date of publication : 2002-04-23 revision: 3
1 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KL2
vorlaufiges Datenblatt preliminary datasheet
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 1200 A, VCC = 1800V VGE = 15V, RG = 2,7W, CGE = 330nF, T vj = 25C VGE = 15V, RG = 2,7W, CGE = 330nF,T vj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200 A, VCC = 1800V VGE = 15V, RG = 2,7W, CGE = 330nF, T vj = 25C VGE = 15V, RG = 2,7W, CGE = 330nF,T vj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 1200 A, VCC = 1800V VGE = 15V, RG = 2,7W, CGE = 330nF, T vj = 25C VGE = 15V, RG = 2,7W, CGE = 330nF,T vj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 1200 A, VCC = 1800V VGE = 15V, RG = 2,7W, CGE = 330nF, T vj = 25C VGE = 15V, RG = 2,7W, CGE = 330nF,T vj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip T = 25C IC = 1200 A, VCC = 1800V, VGE = 15V RG = 1,2W, CGE = 330nF, T vj = 125C, LS = 40nH IC = 1200 A, VCC = 1800V, VGE = 15V RG = 2,7W, CGE = 330nF, T vj = 125C, LS = 40nH tP 10sec, VGE 15V T Vj125C, VCC=2500V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 5200 10 A nH Eoff 1590 mWs Eon 2700 mWs tf 220 330 ns ns td,off 2500 2700 ns ns tr 450 450 ns ns td,on 700 700 ns ns
min.
typ.
max.
RCC'+EE'
-
0,12
-
mW
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 1200 A, VGE = 0V, Tvj = 25C IF = 1200 A, VGE = 0V, Tvj = 125C IF = 1200 A, - diF/dt = 4900 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 1200 A, - diF/dt = 4900 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 1200 A, - diF/dt = 4900 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Erec 430 1150 mWs mWs Qr 650 1200 As As IRM 1180 1300 A A VF
min.
-
typ.
2,60 2,45
max.
3,35 3,30 V V
2 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KL2
vorlaufiges Datenblatt preliminary datasheet
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module lPaste = 1 W/m*K / lgrease = 1 W/m*K RthCK RthJC -
typ.
0,006
max.
0,0085 0,0170 K/W K/W K/W
T vj
-
-
150
C
T vj op
-40
-
125
C
T stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehause, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M4 terminals M8 G M1 AlSiC
AlN
32,2
mm
19,1
mm
> 400 5 Nm
M2
2 8 .. 10 1500
Nm Nm g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KL2
vorlaufiges Datenblatt preliminary datasheet Ausgangskennlinie (typisch) Output characteristic (typical) I = f (VCE) C
VGE = 15V
2400
2000
T = 25C T = 125C
1600
IC [A]
1200
800
400
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
2400
I = f (VCE) C
Tvj = 125C
2000
VGE = 8V VGE = 9V VGE = 10V
1600
VGE = 12V VGE = 15V VGE = 20V
IC [A]
1200
800
400
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
VCE [V]
4 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KL2
Ubertragungscharakteristik (typisch) Transfer characteristic (typical) vorlaufiges Datenblatt preliminary datasheet I = f (VGE) C
VCE = 20V
2400
T = 25C T = 125C
2000
1600
IC [A]
1200
800
400
0 5 6 7 8 9 10 11 12 13
VGE [V]
Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical)
2400
Tj = 25C
I = f (VF) F
2000
Tj = 125C
1600
IF [A]
1200
800
400
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VF [V]
5 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KL2
vorlaufiges Datenblatt preliminary datasheet Schaltverluste (typisch) Switching losses (typical) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
RGom = 1,2 W, RGoff = 2,7 W, CGE = 330 nF, VCE = 1800V, Tj = 125C
8000
Eon
7000 6000 5000 4000 3000 2000 1000 0 0 300
Eoff Erec
E [mJ]
600
900
1200
1500
1800
2100
2400
IC [A]
Schaltverluste (typisch) Switching losses (typical)
14000 12000 10000 8000 6000 4000 2000 0 0 1 2 3 4 5 6
Eon Eoff Erec
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
IC = 1200 A , CGE = 330 nF, VCE = 1800V , Tj = 125C
E [mJ]
7
8
9
10
11
12
13
14
15
RG [W]
6 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KL2
vorlaufiges Datenblatt preliminary datasheet
Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA)
3000
RG,off = 2,7W, CGE = 330 nF Tvj= 125C
2400
1800 IC [A]
1200
IC,Modul IC,Chip
600
0 0 500 1000 1500 2000 2500 3000 3500
VCE [V]
Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA)
3000
Tvj= 125C
2400
1800 IR [A]
1200
600
0 0 500 1000 1500 2000 2500 3000 3500
VR [V]
7 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KL2
vorlaufiges Datenblatt preliminary datasheet Transienter Warmewiderstand Transient thermal impedance
0,1
Z thJC = f (t)
Zth:IGBT Zth:Diode
0,01
ZthJC [K / W]
0,001
0,0001 0,001
0,01
0,1
1
10
t [sec]
i ri [K/kW] : IGBT ti [sec] : IGBT ri [K/kW] : Diode ti [sec]
: Diode
1 1,56 0,0068 3,11 0,0068
2 4,25 0,0642 8,49 0,0642
3 1,26 0,3209 2,52 0,3209
4 1,44 2,0212 2,88 2,0212
8 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KL2
vorlaufiges Datenblatt preliminary datasheet
Gehausemae / Schaltbild Package outline / Circuit diagram
9 (9)
FZ1200R33KL2_V Rev3.xls

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